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SIC Crystal Growth Temperature Measurement

Philihua is the only quartz material supplier in China that has been certified by the three major international semiconductor equipment manufacturers (TEL, Lam Research, and AMAT). The company has built a full industrial chain layout from quartz sand purification to finished composite materials, and has achieved domestic substitution in high-end products such as high-purity quartz glass for semiconductors and photomask substrates. In China, the company is the leading supplier of quartz glass fiber in the aerospace field and provides key materials for many national defense and military projects. Internationally, Philihua is actively expanding its business, and its products have entered the international semiconductor industry chain, and has established cooperative relationships with world-renowned companies.

In SiC crystal growth temperature measurement, infrared (IR) thermal imaging delivers key benefits:
  1. Precise Temperature Uniformity Control: IR monitors thermal gradients across the growth interface in real time, ensuring uniform temperature distribution to prevent crystal defects like dislocations.
  2. Growth Interface Tracking: IR imaging visualizes the solid-liquid interface temperature dynamics, enabling precise adjustment of heating parameters to maintain optimal supersaturation for high-quality crystal growth.
  3. Non-contact Thermal Monitoring: Non-invasive IR sensing avoids contamination of the high-purity SiC growth environment, preserving crystal integrity during the high-temperature process.
  4. Anomaly Detection in Real Time: IR systems quickly identify temperature fluctuations or hot spots in the growth chamber, preventing thermal stress-induced cracks and reducing growth failure rates.